Characteristics of Nitrogen Doped ZnO Film
刘大力,杜国同,王金忠,张源涛,张景林,马艳,杨晓天,赵佰军,杨洪军,刘博阳,杨树人
DOI: https://doi.org/10.3321/j.issn:1000-7032.2004.02.005
2004-01-01
Abstract:ZnO is a direct wide-band gap semiconductor with WZ crystal structure. Due to the low growth tempera- ture and high exciton binding energy (60 meV) at room temperature, it is an ideal semiconductor material with blue light enission. As the development of semiconductor growth technology, high quality ZnO can be obtained, and the research in ZnO attracts much more attention again. In this paper, high quality ZnO thin films on sapphire substrate have been obtained by MOCVD system designed by ourselves. At the same time, the properties of annealed and doped ZnO films have been investigated in details, and good results have been achieved. According to the principle of MOCVD and in order to solve the problem in ZnO growth process, new-type plasma enhanced MOCVD system has been designed and fabricated. The precursors (DEZn and O_2) has been introduced into the reactor by two gas lines, respectively. And the precursors arrive to the surface of sapphire sub- strate by two separated special injectors. The substrate holder can be rotated at high speed and is uniformly heated by a special resistive heater. In order to balance the thermal flow, N_2 is introduced into the reactor uniformly from the upside of the reactor. All above design can reduced the pre-reaction of DEZn and O_2 during the ZnO growth and uniform ZnO films may be grown by this MOCVD system. Furthermore, the plasma generator has been added to the MOCVD system in order to improve doping efficiency during ZnO growth process and to obtain high resistivity or p-type ZnO films. High quality ZnO films have been firsly grown on sapphire substrate in optimized growth condition by MOCVD. At the same time, the doping properties of NH_3 in ZnO film grown on R-plane sapphire were also firstly investigated. After optimized the growth conditions, only〈110〉oriented ZnO film were obtained under NH_3 flux of 80 sccm. Furthermore, the FWHM of ZnO (110) XRD peak is only 0.50°. The AFM images sbow that the surface of the film is the most smooth. Up or low the flux, the surface will become rough and the crystal quality also de- creases. The Hall measurements show that the sample grown under NH_3 flux Of 50 sccm is low p-type conductor with the resisitivity 102Ω·cm, hole concentration + 1.69×10~(16)cm~(-3) and mobility 3.6cm~2·V~(-1)·s~(-1). The XPS spec- tra show that nitrogen and zinc atom forms N—Zn bond under NH_3 flux of 50 sccm. As the flux increase, some hy- drogen atom is introduced into ZnO film, and the conductivity change into n-type. The sample resistivity is up to 10~8Ω·cm under NH_3 flux of 80 sccm.