Abstract:Using optical emission spectroscopy measurements, the plasma formed for the preparation of zinc and aluminum co-doped ZnO films is studied. The O2/N2 mixed gas is excited by electron cyclotron resonance microwave discharge, generating an oxygen-nitrogen plasma. A zinc plume and an aluminum plume are induced by pulsed laser ablation of a zinc target and an aluminum target. The expansion of the plumes in the oxygen-nitrogen plasma enhances the excitation of the species of the oxygen-nitrogen plasma, while the ablated zinc and aluminum species are frequently excited at the same time, forming a highly reactive oxygen-nitrogen-zinc-aluminum plasma containing active oxygen- and nitrogen-related species excited from the O2/N2 gas and zinc and aluminum species ablated from the zinc and aluminum targets, as well as nitric oxide molecules produced in the plasma. The active oxygen species compose a reactive oxygen-containing gaseous environment for oxide formation, and the active zinc species react with the active oxygen species for ZnO film deposition, while the active nitrogen and aluminum species are in situ co-doped in the growing ZnO film. The optical properties of ZnO films are improved by zinc and aluminum co-doping including blue shifting of absorption edge, widening of band gap and preserving of high transparency.

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Optical Properties of ZnO Film by Plasma-Assisted MOCVD

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Growth of ZnO Film by Plasma-assisted MOCVD

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Characteristics of Zno Film Grown by Mocvd

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Preparation and Characterization of N Doped P-type MgZnO Film

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Nitrogen Binding Behavior in ZnO Films with Time-Resolved Cathodoluminescence

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO∶Nax Films

Plasma-Free Nitrogen Doping and Homojunction Light-Emitting Diodes Based on Zno

Spectroscopic Studies of the Plasma for the Preparation of Al-N Co-Doped ZnO Films

Optical properties of p-type ZnO doped by lithium and nitrogen

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface