Abstract:The exploration of zinc oxide (ZnO) has seen rapid growth due to its wide bandgap, high thermal conductivity, and high electron mobility within its nanostructures, making it highly valuable for applications in electronic and optical devices. This study involves the deposition of ZnO nanostructures onto a quartz substrate using the thermal evaporation deposition technique. The research delves into the influence of various annealing environments on morphology and electronic/atomic structures. X-ray Diffraction (XRD) analysis reveals the development of the ZnO phase with a preferred orientation when annealed in a mixture of hydrogen and argon gases. It was observed that the films do not transform into complete ZnO for the as-prepared and for lower temperatures (< 400 °C). Annealing at lower temperatures or room temperature retains the metallic Zn. When subjected to higher annealing temperatures in the presence of oxygen and ambient conditions, formation of ZnO hexagonal wurtzite structures was evident. A wide variation in the morphology was observed for films annealed in different annealing environments, from petal-like structures to rods. Both the band edge and defect emissions using photoluminescence were observed to vary with varying annealing conditions. In-situ XANES uncovers the reduction of Zn and metallic nature noticed in the as-prepared sample and argon annealing at 400 °C. A higher charge transfer by Zn with a prominent delocalization of Zn 4p state was observed in oxygen annealing environment at 400 °C with an enhanced coordination of Zn–O and Zn–Zn. These distinct photoluminescence emissions from the films were correlated to the electronic structure and local atomic structure. Further, this investigation provides a path to develop next-generation optoelectronic devices.

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Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

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In Situ and Ex Situ Investigation on the Annealing Performance of the Zno Film Grown by Ion Beam Deposition

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Effect of Annealing on Photoluminescence of ZnO: Al Thin Films Prepared by Sol-Gel Method

Effect of Rapid Thermal Annealing Ambient on Photoluminescence of Zno Films