Abstract:In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the effect of air annealing on oxygen - vacancy defects in aluminum - doped zinc oxide (Al:ZnO) films. Specifically, the study investigates the performance changes of Al:ZnO films prepared by high - speed atmospheric atomic layer deposition (AALD) at different annealing temperatures in order to optimize their optical, electrical, and structural properties. ### Research Background 1. **Applications of Transparent Conductive Oxides (TCOs)**: - TCOs are widely used in many fields such as optoelectronic devices and sensors because they possess both high conductivity and high optical transparency simultaneously. - Traditional ITO materials face problems such as high cost and complex processes, so finding alternative materials has become a research hotspot. 2. **Advantages and Challenges of Al:ZnO**: - As an n - type TCO, Al:ZnO has excellent properties similar to ITO and can be prepared by various deposition techniques. - However, there are few studies on the effect of post - annealing treatment on the properties of Al:ZnO films, especially for films prepared by the AALD method. ### Research Purposes - **Optimize Film Properties**: By controlling the annealing temperature, reduce oxygen - vacancy defects and improve the crystallinity, electrical properties, and optical properties of the films. - **Understand the Mechanism**: Reveal the change mechanism of oxygen vacancies during the annealing process and their influence on the micro - structure and macro - properties of the films. ### Main Research Contents 1. **Film Preparation**: - Al:ZnO films are prepared using the high - speed atmospheric atomic layer deposition (AALD) technique. - The AALD technique has the advantages of fast deposition speed, good uniformity, and few defects. 2. **Annealing Treatment**: - The prepared films are subjected to air annealing treatment in the range of 300°C to 800°C. - The effects of different annealing temperatures on the chemical state, crystal structure, electrical properties, and optical properties of the films are studied. 3. **Property Characterization**: - **X - ray Photoelectron Spectroscopy (XPS)**: Analyze the changes in oxygen vacancies. - **X - ray Diffraction (XRD)**: Evaluate the crystal structure and grain size. - **Scanning Electron Microscopy (SEM)**: Observe the microscopic morphology. - **Hall - effect Measurement**: Determine the resistivity, mobility, and carrier concentration. - **Optical Property Testing**: Including transmittance, reflectance, and absorption coefficient, etc. ### Key Findings - **Reduction in Oxygen Vacancies**: As the annealing temperature increases, oxygen vacancies are significantly reduced, especially most obviously at 600°C. - **Improvement in Crystallinity**: Annealing improves the crystallinity of the films and increases the grain size. - **Optimization of Electrical Properties**: The film annealed at 600°C has the lowest resistivity, increased mobility, and reduced carrier concentration. - **Changes in Optical Properties**: The bandgap first decreases and then increases with the annealing temperature, and the refractive index also changes accordingly. ### Conclusion Air annealing treatment can effectively regulate oxygen - vacancy defects in Al:ZnO films and optimize their electrical and optical properties. An appropriate annealing temperature (such as 600°C) can reduce oxygen vacancies while maintaining good crystallinity, thereby enhancing the overall performance of the films. This research provides important theoretical and technical support for the application of Al:ZnO films in optoelectronic devices.

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition