Abstract:The exploration of zinc oxide (ZnO) has seen rapid growth due to its wide bandgap, high thermal conductivity, and high electron mobility within its nanostructures, making it highly valuable for applications in electronic and optical devices. This study involves the deposition of ZnO nanostructures onto a quartz substrate using the thermal evaporation deposition technique. The research delves into the influence of various annealing environments on morphology and electronic/atomic structures. X-ray Diffraction (XRD) analysis reveals the development of the ZnO phase with a preferred orientation when annealed in a mixture of hydrogen and argon gases. It was observed that the films do not transform into complete ZnO for the as-prepared and for lower temperatures (< 400 °C). Annealing at lower temperatures or room temperature retains the metallic Zn. When subjected to higher annealing temperatures in the presence of oxygen and ambient conditions, formation of ZnO hexagonal wurtzite structures was evident. A wide variation in the morphology was observed for films annealed in different annealing environments, from petal-like structures to rods. Both the band edge and defect emissions using photoluminescence were observed to vary with varying annealing conditions. In-situ XANES uncovers the reduction of Zn and metallic nature noticed in the as-prepared sample and argon annealing at 400 °C. A higher charge transfer by Zn with a prominent delocalization of Zn 4p state was observed in oxygen annealing environment at 400 °C with an enhanced coordination of Zn–O and Zn–Zn. These distinct photoluminescence emissions from the films were correlated to the electronic structure and local atomic structure. Further, this investigation provides a path to develop next-generation optoelectronic devices.

In Situ and Ex Situ Investigation on the Annealing Performance of the Zno Film Grown by Ion Beam Deposition

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Thermal annealing effect on optical properties of electrodeposited ZnO thin films

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Role of annealing environments on the local electronic and optical properties of zinc oxide films

Effect of Rapid Thermal Annealing Ambient on Photoluminescence of Zno Films

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Effect of Post-Annealing Treatments on the Properties of Zn1−xCdxO Films on Glass Substrates