Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition

Yang Geng,Zhang-Yi Xie,Saisheng Xu,Qingqing Sun,Shi‐Jin Ding,Hong-Liang Lü,David Wei Zhang
DOI: https://doi.org/10.1149/2.015203jss
IF: 2.2
2012-01-01
ECS Journal of Solid State Science and Technology
Abstract:The influence of rapid thermal annealing on structural, luminescent, and electrical properties of Al-doped ZnO film grown by atomic layer deposition is investigated. The (100) diffraction peaks show a systematic shift to higher 2θ values for the samples annealed in the temperatures of 400–700°C. The photoluminescence spectra reveal that the UV emission intensity slightly decreases as the annealing temperature increases up to 600°C and then increases significantly after the film is annealed in the temperature range of 700 ∼ 800°C. In addition, the resistivity of the film increases gradually with elevated annealing temperature, which is attributed to the decrease of the carrier concentration and mobility.
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