Abstract:The exploration of zinc oxide (ZnO) has seen rapid growth due to its wide bandgap, high thermal conductivity, and high electron mobility within its nanostructures, making it highly valuable for applications in electronic and optical devices. This study involves the deposition of ZnO nanostructures onto a quartz substrate using the thermal evaporation deposition technique. The research delves into the influence of various annealing environments on morphology and electronic/atomic structures. X-ray Diffraction (XRD) analysis reveals the development of the ZnO phase with a preferred orientation when annealed in a mixture of hydrogen and argon gases. It was observed that the films do not transform into complete ZnO for the as-prepared and for lower temperatures (< 400 °C). Annealing at lower temperatures or room temperature retains the metallic Zn. When subjected to higher annealing temperatures in the presence of oxygen and ambient conditions, formation of ZnO hexagonal wurtzite structures was evident. A wide variation in the morphology was observed for films annealed in different annealing environments, from petal-like structures to rods. Both the band edge and defect emissions using photoluminescence were observed to vary with varying annealing conditions. In-situ XANES uncovers the reduction of Zn and metallic nature noticed in the as-prepared sample and argon annealing at 400 °C. A higher charge transfer by Zn with a prominent delocalization of Zn 4p state was observed in oxygen annealing environment at 400 °C with an enhanced coordination of Zn–O and Zn–Zn. These distinct photoluminescence emissions from the films were correlated to the electronic structure and local atomic structure. Further, this investigation provides a path to develop next-generation optoelectronic devices.

Production Of High-Quality Zno Films By The Two-Step Annealing Method

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

In Situ and Ex Situ Investigation on the Annealing Performance of the Zno Film Grown by Ion Beam Deposition

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Fabrication of Zno Nanoneedle/Nanocolumn Composite Films and Annealing Induced Improvement in Their Microstructural and Photoluminescence Characteristics

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

Effects of Annealing Ambience on ZnO:N Films Grown by MOCVD and the P-Type Doping Mechanism of ZnO:N Films Investigated by XANES

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Homoepitaxy of ZnO: from the substrates to doping

Influence of Postdeposition Annealing on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

Preparation of highly transparent conductive Al-doped ZnO thin films and annealing effects on properties

In-Situ Doping Preparation of Al-Doped Zno Films Via Pulsed Laser Co-Ablation of Zn and Al Targets with Assistance of Oxygen Plasma

Role of annealing environments on the local electronic and optical properties of zinc oxide films

Influence of Annealing on the Properties of Mn and N Co-Doped Zn0.88Mn0.12O:N Films

EFFECT OF ANNEALING AMBIENCES ON STRUCTURAL,ELECTRICAL AND OPTICAL PROPERTIES OF Al-F CO-DOPED ZnO THIN FILMS