Abstract:The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N2 are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O2. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N2)O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N2)O is larger than that of NO, i.e. the ratio > 1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O2, the percentage content of (N2)O is fewer than that of NO, i.e., the ratio < 1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80 K) PL spectra of ZnO:N film annealed in N2 and that of ZnO:N film annealed in O2. An emission band located at 3.358 eV is observed in the spectra of the ZnO:N film after annealed in N2, this emission band is due to donor-bound exciton (D0X). After annealed in O2, the PL of the donor-bound exciton disappeared, an emission band located at 3.348 eV is observed, this emission band is assigned to acceptor-bound exciton (A0X).

Fabrication of Na-N Codoped P-Type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Influence of Dopant Content on Morphology and Optical Constants of ZnO:Na Films by Sol-Gel Method

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

Effects of Annealing Ambience on ZnO:N Films Grown by MOCVD and the P-Type Doping Mechanism of ZnO:N Films Investigated by XANES

Properties of N-doped ZnO thin films in annealing process

Mechanism of Na-doped P-Type ZnO Films: Suppressing Na Interstitials by Codoping with H and Na of Appropriate Concentrations

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

Na Doping Concentration Tuned Conductivity of ZnO Films Via Pulsed Laser Deposition and Electroluminescence from ZnO Homojunction on Silicon Substrate

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO∶Nax Films

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn 3 N 2

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

Realization of P-Type Non-Polar A-Plane Zno Films Via Doping of Na Acceptor

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Influence of Annealing on the Properties of Mn and N Co-Doped Zn0.88Mn0.12O:N Films

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures