Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Fabrication and Characteristics of the Low-Resistive P-Type ZnO Thin Films by DC Reactive Magnetron Sputtering

p-Type conduction in Al–N co-doped ZnO films

The Investigation of Ellipsometry and DLTS Characteristic for the ZnO Films

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

P-Type Zno Thin Films Prepared by Oxidation of Zn3n2 Thin Films Deposited by Dc Magnetron Sputtering

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

High Quality P-Type Zno Film Growth by A Simple Method and Its Properties

Realization of p-type ZnO films via monodoping of Li acceptor

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Fabrication of Na-N Codoped P-Type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition