Abstract:A yellow-orange nitrogen-doped zinc oxide (ZnO:N) film was deposited on a quartz glass substrate at 510K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The lattice constants of the as-grown ZnO:N are much larger than those of undoped ZnO, and decrease with increasing annealing temperature due to escape of the nitrogen from the ZnO:N and decrease of tensile stress, accompanied with color change from yellow-orange to pale yellow. The nitrogen occupies two chemical environments in the ZnO:N based on x-ray photoelectron spectroscopy measurement. One is NO acceptor formed by substitution of N atom for O sublattice, and another is (N2)O double donors produced by substitution of N molecular for O site, which make the lattice constants expanded. The as-grown ZnO:N film shows insulating, but behaves p-type conduction in the dark after annealed at 863K for 1h under 10−3Pa. Unfortunately, the p-type conduction is not stable and reverts to n type soon. However, after illuminated by sunlight for several minutes, the n-type ZnO:N transforms into p type again. The mechanism of the transformation of the conductivity behavior is discussed in the present work.

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Effects of Nitrogen Doping and Illumination on Lattice Constants and Conductivity Behavior of Zinc Oxide Grown by Magnetron Sputtering

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

Junction Properties of Nitrogen-Doped Zno Thin Films

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Properties of N-doped ZnO thin films in annealing process

Formation of P-Type Mgzno by Nitrogen Doping

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

p-Type conduction in Al–N co-doped ZnO films

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn 3 N 2

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

Growth Ambient Dependent Electrical Properties of Lithium and Nitrogen Dual-Doped Zno Films Prepared by Radio-Frequency Magnetron Sputtering

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Preparation and Characterization of N Doped P-type MgZnO Film