Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

ZZ Ye,JG Lu,HH Chen,YZ Zhang,L Wang,BH Zhao,JY Huang
DOI: https://doi.org/10.1016/s0022-0248(03)01007-8
IF: 1.8
2003-01-01
Journal of Crystal Growth
Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.
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