Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Fabrication of Na-N Codoped P-Type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

Fabrication and Characteristics of the Low-Resistive P-Type ZnO Thin Films by DC Reactive Magnetron Sputtering

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Realization of p-type ZnO films via monodoping of Li acceptor

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Preparation of Na Delta-Doped P-Type ZnO Thin Films by Pulsed Laser Deposition Using NaF and ZnO Ceramic Targets

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Na Doping Concentration Tuned Conductivity of ZnO Films Via Pulsed Laser Deposition and Electroluminescence from ZnO Homojunction on Silicon Substrate

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Effects of diffusion temperature and diffusion time on fabrication of Na-diffused p-type ZnO thin films

Effect of Na contents on fabrication of p-type non-polar m -plane ZnO films

p-Type conduction in Al–N co-doped ZnO films