Abstract:Al-doped zinc oxide (AZO) thin films were deposited onto flexible ultra-thin glass substrates by using a direct current (DC) magnetron sputtering process. The effects of sputtering power, working pressure and substrate temperature on the morphology and optoelectronic performances of AZO films were investigated. The optimal sputtering power, working pressure and substrate temperature for AZO film were determined to be 100W, 0.9Pa and 150℃, respectively. Further increasing or decreasing the sputtering power, working pressure and substrate temperature degrades the quality of AZO films. XRD patterns show all as-sputtered AZO thin films are preferred to grow along <0002> direction. Moreover, the largest grain size, which depicts the best microstructure of AZO films, matches with the smallest stress value. It can be seen from SEM images that the surface is smooth and dense. The smallest value of the resistivity is 1.784×10−3Ωcm and the average transmittance of all AZO films in the visible range is about 80%. The X-ray photoelectron spectroscopy spectra show that the amount of Al element in the AZO film is very small.

Fabrication and Characteristics of the Low-Resistive P-Type ZnO Thin Films by DC Reactive Magnetron Sputtering

Low Resistivity Transparent Conducting CdO Thin Films Deposited by DC Reactive Magnetron Sputtering at Room Temperature

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

P-Type Zno Thin Films Prepared by Oxidation of Zn3n2 Thin Films Deposited by Dc Magnetron Sputtering

Fabrication of Na-N Codoped P-Type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Study on formation and properties of p-type undoped Zn-rich ZnO thin film

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Fabrication and Characteristics of ZnO Thin Films with an Al/Si (100) Substrates

Realization of p-type ZnO films via monodoping of Li acceptor

Properties of N-doped ZnO thin films in annealing process

Fabrication and Post-Anneal Activation of P-Type ZnMgO:Li Film Using Dc Reactive Magnetron Sputtering

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source