Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

Characteristics of a Phosphorus-Doped P-Type ZnO Film by MBE

Fabrication of Phosphorus-Doped ZnO Quantum Dots by Metal Organic Chemical Vapor Deposition

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Effects of Phosphorus Doping in ZnO Nanocrystals by Metal Organic Chemical Vapor Deposition

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Fabrication of Sb-Doped p-Type ZnO Thin Films by PLD