Abstract:The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping. ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment, and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500, 700 ⁰C). The optical properties of samples were investigated by photoluminescence (PL) spectroscopy, which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping. The low-temperature PL spectra of the sample which annealed at 700 ⁰C for 1 h exhibited acceptor related emission peaks located at 3.351, 3.311, 3.246 and 3.177 eV, which were attributed to A ⁰X, FA, DAP and DA-1LO, respectively. The acceptor binding energy is estimated to be about 122 meV, which is agreed with the theoretic values in phosphorus-doped ZnO films. In this paper, through thermal diffusion method to realize the p-type doped ZnO thin films, it solved the main problems which limited the development of ZnO based optoelectronic devices, and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device.

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films

Characteristics of a Phosphorus-Doped P-Type ZnO Film by MBE

p-Type conduction in Al–N co-doped ZnO films

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Local P-Type Conduction of Na-doped ZnO Thin Films Grown by MOCVD

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering

Optical Properties Investigation of P-Type Zno Film Based on Doping by Diffusion

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition