Abstract:Zinc oxide (ZnO), a wide bandgap (3.37 eV) semiconductor with large exciton binding energy (60 meV), is a promising candidate for optoelectronics application. The bottleneck to harness its capability is linked to the default ntype nature imposed on the material by native defects. Thus, controlling its conductivity (p, i or n) with post growth processes is a strenuous task. Phosphorus is a preferred p-type dopant because of its large solubility. In this report, we have studied the effect of variation in phosphorus implantation time to 40, 60 and 70s on the optical and structural properties of ZnO thin films. Plasma immersion ion implantation technique was carried out to dope the thin film deposited by RF sputter technique and samples were further annealed at 900oC in oxygen ambience for 10s. Low temperature photoluminescence (PL) spectra showed improvement in acceptor behaviour with increase in doping time. Sample doped for 70s exhibited maximum number of acceptor based excitonic peaks at around 3.24, 3.31 and 3.35 eV corresponding to donor-acceptor pair (DAP), free acceptor (FA) and acceptor-bound (AoX) excitons, respectively. High resolution x-ray diffraction showed dominant (002) peak from all samples and increase in phosphorus implantation time shifted the peak towards higher 2θ angle. X-ray photoelectron spectroscopy further suggested increment in phosphorus concentration with implantation time as the number of peaks corresponding to P-O bond observed from P 2p spectra was improved. Scanning electron microscopy images revealed better annihilation of implantation defects post annealing.

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Characteristics of a Phosphorus-Doped P-Type ZnO Film by MBE

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films

Investigating time-varying phosphorous doping effect on the structural and optical properties of ZnO thin films

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Study on formation and properties of p-type undoped Zn-rich ZnO thin film

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Optical and Electrical Properties of P-Type Zinc Oxide Thin Films Synthesized by Ion Beam Assisted Deposition

Effects of Phosphorus Doping in ZnO Nanocrystals by Metal Organic Chemical Vapor Deposition