Abstract:Over the past decades, zinc oxide semiconductor and its derivatives have been extensively developed because of its optoelectronic properties. Since ZnO is an intrinsic n-type semiconductor, how to synthesize high-quality p-type ZnO semiconductors and investigate their optoelectronic properties and local chemical structures are important and necessary. In this article, two studies of synthesizing both undoped and phosphorus-doped ZnO nanostructures by hydrothermal method and chemical vapor deposition (CVD) technique are presented. Scanning electron microscopy (SEM) and laboratory X-ray diffraction (XRD) are used to track the surface morphology and the crystalline structure of both undoped and phosphorus doped ZnO nanostructures, respectively. X-ray absorption near edge structures (XANES), X-ray emission spectroscopy (XES) and X-ray excited optical luminescence (XEOL) are also used to determine the local chemical information of both undoped and phosphorus-doped ZnO nano/microstructures such as local symmetry and optical properties. It is found that the phosphorus is successfully doped into the surface of ZnO and substituted the Zn. The phosphorus-doped ZnO products have better crystallinity and less oxygen vacancies on the surface. These two are correlated as one leads to the other. The XEOL results suggest that the average bandgap for undoped and phosphorus doped ZnO is the same, 3.24 eV. The second derivative of the absorption-emission spectra yields the fundamental bandgap for undoped ZnO and phosphorus-doped ZnO is 3.25 eV. The implication of this observation is discussed.

Characteristics of a Phosphorus-Doped P-Type ZnO Film by MBE

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Donor and Acceptor Competitions in Phosphorus-Doped ZnO

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films

Effects of Phosphorus Doping in ZnO Nanocrystals by Metal Organic Chemical Vapor Deposition

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Amphoteric Phosphorus Doping for Stable P‐type ZnO

Optical Properties Investigation of P-Type Zno Film Based on Doping by Diffusion

Plasma-activated Nitrogen-Doped P-Type ZnO Thin Films with Multi-Buffer-layers Grown on Sapphire (0001) by L-MBE

p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Formation of P-Type Mgzno by Nitrogen Doping