Abstract:Over the past decades, zinc oxide semiconductor and its derivatives have been extensively developed because of its optoelectronic properties. Since ZnO is an intrinsic n-type semiconductor, how to synthesize high-quality p-type ZnO semiconductors and investigate their optoelectronic properties and local chemical structures are important and necessary. In this article, two studies of synthesizing both undoped and phosphorus-doped ZnO nanostructures by hydrothermal method and chemical vapor deposition (CVD) technique are presented. Scanning electron microscopy (SEM) and laboratory X-ray diffraction (XRD) are used to track the surface morphology and the crystalline structure of both undoped and phosphorus doped ZnO nanostructures, respectively. X-ray absorption near edge structures (XANES), X-ray emission spectroscopy (XES) and X-ray excited optical luminescence (XEOL) are also used to determine the local chemical information of both undoped and phosphorus-doped ZnO nano/microstructures such as local symmetry and optical properties. It is found that the phosphorus is successfully doped into the surface of ZnO and substituted the Zn. The phosphorus-doped ZnO products have better crystallinity and less oxygen vacancies on the surface. These two are correlated as one leads to the other. The XEOL results suggest that the average bandgap for undoped and phosphorus doped ZnO is the same, 3.24 eV. The second derivative of the absorption-emission spectra yields the fundamental bandgap for undoped ZnO and phosphorus-doped ZnO is 3.25 eV. The implication of this observation is discussed.

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Characteristics of a Phosphorus-Doped P-Type ZnO Film by MBE

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Raman Study of Lattice Dynamic Behaviors in Phosphorus-Doped Zno Films

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source