Abstract:Zinc oxide (ZnO), a wide bandgap (3.37 eV) semiconductor with large exciton binding energy (60 meV), is a promising candidate for optoelectronics application. The bottleneck to harness its capability is linked to the default ntype nature imposed on the material by native defects. Thus, controlling its conductivity (p, i or n) with post growth processes is a strenuous task. Phosphorus is a preferred p-type dopant because of its large solubility. In this report, we have studied the effect of variation in phosphorus implantation time to 40, 60 and 70s on the optical and structural properties of ZnO thin films. Plasma immersion ion implantation technique was carried out to dope the thin film deposited by RF sputter technique and samples were further annealed at 900oC in oxygen ambience for 10s. Low temperature photoluminescence (PL) spectra showed improvement in acceptor behaviour with increase in doping time. Sample doped for 70s exhibited maximum number of acceptor based excitonic peaks at around 3.24, 3.31 and 3.35 eV corresponding to donor-acceptor pair (DAP), free acceptor (FA) and acceptor-bound (AoX) excitons, respectively. High resolution x-ray diffraction showed dominant (002) peak from all samples and increase in phosphorus implantation time shifted the peak towards higher 2θ angle. X-ray photoelectron spectroscopy further suggested increment in phosphorus concentration with implantation time as the number of peaks corresponding to P-O bond observed from P 2p spectra was improved. Scanning electron microscopy images revealed better annihilation of implantation defects post annealing.

Raman Study of Lattice Dynamic Behaviors in Phosphorus-Doped Zno Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Raman study of N+-implanted ZnO

Raman Scattering Spectra of Coupled Lo-Phonon-Plasmon Modes in N-In Codoped P-Type Zno Thin Films

Photoluminescence and X-Ray Photoelectron Spectroscopy of P-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Mechanism of P-Type Conductivity for Phosphorus-Doped ZnO Thin Film

Studying the Raman Spectra of Ag Doped ZnO Films Grown by PLD

Study on Raman Spectra of P-Type Semiconductor ZnO Thin Films

Raman Spectroscopy of (mn, Co)-Codoped Zno Films

Photoluminescence Study of Novel Phosphorus-Doped Zno Nanotetrapods Synthesized by Chemical Vapour Deposition

Low Temperature Electron Transport in Phosphorus-Doped ZnO Films Grown on Si Substrates

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

Raman studies on Ni-doped ZnO powders

The origin of the ∼274cm −1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films

Temperature-dependent Raman Scattering in N–In Codoped P-Type ZnO Thin Films

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Investigating time-varying phosphorous doping effect on the structural and optical properties of ZnO thin films