Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

X. H. Pan,W. Guo,Z. Z. Ye,B. Liu,Y. Che,H. P. He,X. Q. Pan
DOI: https://doi.org/10.1063/1.3126518
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of SbZn-2VZn complex.
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