Preparation and Optical Properties of Zn0.85sb0.1o Alloy Films

Xiuquan Gu,Liping Zhu,Yulong Zhao,Yinghuai Qiang
DOI: https://doi.org/10.1016/j.materresbull.2013.02.040
IF: 5.6
2013-01-01
Materials Research Bulletin
Abstract:Zn0.85Sb0.1O films were synthesized by pulsed laser deposition (PLD). The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements were carried out to evaluate the microstructure of the films. These films exhibited a single-phase hexagonal structure with (002) preferred orientation, despite the high Sb content of ∼10% and the resulting large lattice distortion in the films. Moreover, the films showed semiconductor properties with high resistivity of ∼104Ωcm, which was possibly related to a compensation of intrinsic defects. Compared with the undoped ZnO, a reduction in the band gap by 40meV was clearly observed in ultraviolet–visible absorption spectra.
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