Electrical and Optical Properties of Sb-Doped ZnO Thin Films

Ping DING,Xin-hua PAN,Zhi-zhen YE
DOI: https://doi.org/10.3969/j.issn.1674-8425-B.2010.05.009
2010-01-01
Abstract:Sb-doped ZnO thin films were fabricated on n-Si(001) by oxygen plasma-assisted pulsed laser deposition(PLD).The room temperature electrical properties of the Sb-doped samples show p-type conductivity with a resistivity of 44.18 Ω·cm,a Hall mobility of 3.74 cm2V-1s-1,and a carrier concentration of 3.78×1016 cm-3.The p-type behavior shows no significant change after nine months at room temperature.The I-V of heterostructure shows rectification behavior,further demonstrating its p-type conduction.Two acceptor states,with the acceptor levels of 161 and 336 meV,are identified by low-temperature photoluminescence(PL) spectrum.The deep acceptor is Zn vacancy,the shallow one is SbZn-2VZn complex induced by Sb doping.The origin of p-type behavior in Sb-doped ZnO thin films is thought to be the formation of SbZn-2VZn complex.
What problem does this paper attempt to address?