Abstract:ZnO is a transparent conductive oxide that has received great attention over the past few decades, as it is a key component in light-emitting diodes, gas sensors, and solar cells. However, the electrical conductivity of intrinsic ZnO is not ideal, and thus, ZnO is often doped with appropriate elements such as fluorine (F). Unfortunately, the lack of adequate precursors in traditional doping methods may increase the difficulty of ZnO doping with F. In this work, we realized, for the first time, high-concentration F-doped ZnO thin films with a high Hall mobility of 20.7 cm2/V/s via femtosecond-laser hyperdoping. The highest atomic percentage of F was determined to be 8.3 at.%, which was over three times larger than that of previously reported F-doped ZnO films. Compared with pristine ZnO, the highest carrier concentration of the F-doped ZnO could be increased by four orders of magnitude, and the resistivity could be reduced by three orders of magnitude. Our results demonstrated that the femtosecond-laser hyperdoping technology could achieve efficient non-metallic hyperdoping of ZnO with high transparency and Hall mobility, thereby reducing the power dissipation and improving the current carrying capacity of ZnO-based devices.

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Fabrication of Sb-Doped p-Type ZnO Thin Films by PLD

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

Preparation of P-Type ZnMgO Thin Films by Sb Doping Method

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Electrical and Optical Properties of Sb-Doped ZnO Thin Films

High-Mobility Sb-Doped P-Type Zno by Molecular-Beam Epitaxy

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Large-sized-mismatched Group-V Element Doped ZnO Films Fabricated on Silicon Substrates by Pulsed Laser Deposition

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films