Abstract:The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations by combining the standard density functional theory and hybrid functional methods. We find that p-type doping can be realized by inserting an ultrathin ZnX (X = S, Se and Te) layer, doped with N-X or Ag-Zn, into ZnO to form short-period (ZnO)(m)/(ZnX)(n) (m > n) superlattices. The formation energy is the lowest for NX or AgZn in the ZnX layer. The Zn-rich (Zn-poor) condition is favourable for the formation of the NX (AgZn) defect. Compensation by the native defects can be avoided for the Ag-doped (ZnO) m/(ZnX) n under the Zn-poor condition. The N (Ag) acceptor activation energy can be reduced from 0.45 (0.43) eV in ZnO to 0.33 (0.32) eV in (ZnO)(5)/(ZnS)(1), 0.20 (0.24) eV in (ZnO)(5)/(ZnSe)(1) and 0.12 (0.13) eV in (ZnO)(5)/(ZnTe)(1), which is caused by the ZnX-monolayer modulation to the local structure around the NX or AgZn defect and the high-lying p-derived valence bands. Moreover, the band gaps can be tuned from 3.40 eV of ZnO to 3.21 eV of (ZnO)(5)/(ZnS)(1), 2.41 eV of (ZnO)(5)/ (ZnSe)(1) and 2.26 eV of (ZnO)(5)/(ZnTe)(1), which is promising for the integration of ZnO-based white light-emitting diodes.

High-Mobility Sb-Doped P-Type Zno by Molecular-Beam Epitaxy

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Electrical and Optical Properties of Sb-Doped ZnO Thin Films

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

P-Type Zno By Sb Doping For Pn-Junction Photodetectors

Fabrication of Sb-Doped p-Type ZnO Thin Films by PLD

P-Type Behavior from Sb-Doped Zno Heterojunction Photodiodes

Preparation of P-Type ZnMgO Thin Films by Sb Doping Method

Influence of Molar Ratio of Sb/Zn on the Crystal, Electrical and Optical Properties of Sb-doped ZnO Films

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

P-Type Zno Films With Solid-Source Phosphorus Doping By Molecular-Beam Epitaxy

Realization of P-Type Non-Polar A-Plane Zno Films Via Doping of Na Acceptor

Bi-induced Acceptor States in ZnO by Molecular-Beam Epitaxy

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Breakthrough of the P-Type Doping Bottleneck in Zno by Inserting an Ultrathin Znx (X = S, Se and Te) Layer Doped with N-X or Ag-Zn