Bi-induced Acceptor States in ZnO by Molecular-Beam Epitaxy

F. X. Xiu,L. J. Mandalapu,Z. Yang,J. L. Liu,G. F. Liu,J. A. Yarmoff
DOI: https://doi.org/10.1063/1.2243732
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Bi-doped ZnO films were grown on Si (111) substrates by molecular-beam epitaxy. X-ray photoelectron spectroscopy and diffraction measurements reveal that Bi was incorporated into ZnO films without any phase separation. Room-temperature Hall effect measurements show a significant reduction of electron concentration and an increase of resistivity for Bi-doped ZnO films. In addition, a 3.222eV photoluminescence emission was observed particularly in the Bi-doped ZnO films and was identified as a donor-acceptor pair transition by temperature-dependent and excitation power-dependent photoluminescence measurements. These results indicate the possibility of generating acceptor states by Bi doping.
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