Abstract:N-doped, p-type ZnO ( ZnO : N) thin films were prepared by magnetron sputtering using NO as the N-doping source. The introduction of Ar in the growth ambient could evidently improve the p-type conductivity and crystal quality of the ZnO : N films, with the lowest room-temperature resistivity of 3.51 Omega cm obtained at an optimal Ar partial pressure of 30%. The p-type ZnO : N films have high optical quality, as suggested by temperature-dependent photoluminescence spectra. The N-O substitution acceptor state with an energy level of 180 meV was identified from the free-to-neutral-acceptor ( e, A(0)) transition. The N-O-acceptor bound-exciton binding energy was derived to be 17 meV from the neutral-acceptor-bound- exciton and free exciton emissions. The Haynes factor was about 0.094 for the N-O acceptor in ZnO. Besides the N-O acceptor, a zinc vacancy ( V-Zn) acceptor state with an energy level of 255 meV was also identified in ZnO : N from the ( e, A(0)) transition, which might also contribute to the observed p-type conductivity.

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Optical properties of p-type ZnO doped by lithium and nitrogen

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Preparation and Photoluminescent Properties of P-Type Li-doped ZnMgO Thin Films

Identification of about 100-Mev Acceptor Level in ZnO Nanostructures by Photoluminescence

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Realization of p-type ZnO films via monodoping of Li acceptor

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films