Abstract:Nanostructured ZnO, such as ZnO nanowires (NWs), is a promising material system for a wide range of electronic applications ranging from light emission to water splitting. Utilization of ZnO requires development of effective and controllable p-type doping. Nitrogen is considered among key p-type dopants though the exact origin of N-induced acceptors is not fully understood, especially in the case of nanostructured ZnO. In this work we employ electron paramagnetic resonance (EPR) spectroscopy to characterize N-related acceptors in ZnO NWs. N doping was achieved using ion implantation commonly employed for these purposes. We show that the Fermi level position is lowered in the N implanted NWs, indicating the formation of compensating acceptors. The formed acceptor is unambiguously proven to involve an N atom based on a resolved hyperfine interaction with a 14N nucleus with a nuclear spin I = 1. The revealed center is shown to act as a deep acceptor with an energy level located at about 1.1 eV above the top of the valence band. This work represents the first unambiguous identification of acceptors deliberately introduced in ZnO nanostructures. It also shows that the configuration and electronic structure of the N-related acceptors in nanostructures differ from those in ZnO bulk and thin-films. The present findings are of importance for understanding the electronic properties of nanostructured ZnO required for its future electronic applications.

Identification of about 100-Mev Acceptor Level in ZnO Nanostructures by Photoluminescence

Acceptor Related Photoluminescence and Field Emission of Zno:P Nanostructures

Acceptor-related Emissions in Indium-Doped ZnO Nanorods

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

Layer-structured ZnO Nanowire Arrays with Dominant Surface- and Acceptor-Related Emissions

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Photoluminescence Spectra of Nano-Structured ZnO Thin Films

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Photoluminescence Properties of Zno Nanoneedles Grown by Metal Organic Chemical Vapor Deposition

Localized Exciton Emission from ZnO Nanocrystalline Films

Synthesis, optical and field electron emission properties of low-dimensional ZnO nano-structures

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Optical Properties of Na-Doped Zno Nanorods Grown by Metalorganic Chemical Vapor Deposition

Identification of a Nitrogen-related Acceptor in ZnO Nanowires

Investigation of Luminescence Properties of ZnO Nanowires at Room Temperature

Structural, Photoluminescence, and Field Emission Properties of Vertically Well-Aligned Zno Nanorod Arrays

Resonant Raman scattering and photoluminescence from high-quality nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

Photoluminescence Characterization of Nanocrystalline ZnO Array

Deep-level Emissions Influenced by O and Zn Implantations in ZnO