Localized Exciton Emission from ZnO Nanocrystalline Films

Zheng Xu,Haiping He,Luwei Sun,Yizheng Jin,Binghui Zhao,Zhizhen Ye
DOI: https://doi.org/10.1063/1.3310804
IF: 2.877
2010-01-01
Journal of Applied Physics
Abstract:ZnO nanocrystalline films were grown using In2O3 nanostructure as template by pulsed laser deposition. A strong emission at 3.372 eV dominates the low temperature photoluminescence (PL) spectra. Combined with annealing and surface passivation process, it is indicated from temperature-dependent PL results that the emission could be attributed to recombination of localized excitons. The low probability that localized excitons decay through nonradiative recombination centers may contribute to the efficient luminescence at low temperature. It was suggested that disorder introduced by grain boundaries is responsible for the exciton localization.
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