Abstract:The authors report fabrication of aluminum monodoped ZnO (AlZnO) and aluminum-indium dual-doped ZnO (AlInZnO) nanorods arrays. Optical properties of AlZnO and AlInZnO nanorods are studied through temperature-dependent photoluminescence (PL) and PL excitation (PLE). Compared to AlInZnO nanorods, AlZnO nanorods possess better PL properties, as evidenced by a higher ratio of intensity of band-edge emission to green emission at 10 K and a higher PL intensity at room temperature. As supported by x-ray diffraction patterns, AlZnO nanorods also have higher crystallinity than AlInZnO nanorods. Indium doping induces a pronounced donor-acceptor pair transition of ∼3.22 eV at 10 K, the mechanism of which is discussed. Temperature-dependent energies of the A free exciton (FXA) and neutral donor bound exciton (D0X) are analyzed and the Einstein temperature is deduced to be ∼310 K. An activation energy of ∼8 meV is determined from the quenching of D0X as a function of temperature in AlInZnO nanorods. It is interpreted that nonradiative centers caused by indium segregation result in the small activation energy. Moreover, temperature-dependent PLE of AlZnO and AlInZnO nanorods reveals that the donor levels of aluminum and indium are 75 and 102 meV, respectively. Considering that the donor level of Al is shallower than that of In and that the optical and crystal properties of AlZnO nanorods are better than those of AlInZnO nanorods, aluminum is a better n-type dopant than indium for ZnO nanorods.

Acceptor-related Emissions in Indium-Doped ZnO Nanorods

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Correlation Between the 3.31-Ev Emission and the Doping Level in Indium-Doped ZnO Nanostructures

Temperature-Dependent Photoluminescence and Photoluminescence Excitation of Aluminum Monodoped and Aluminum-Indium Dual-Doped Zno Nanorods

Acceptor Related Photoluminescence and Field Emission of Zno:P Nanostructures

Identification of about 100-Mev Acceptor Level in ZnO Nanostructures by Photoluminescence

Temperature-Dependent Photoluminescence of Quasialigned Al-Doped Zno Nanorods

Annealing-induced changes of the 3.31 eV emission in ZnO nanorods

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

Highly Efficient Orange Emission in ZnO:Se Nanorods

Photoluminescence Properties of Quasialigned Zncdo Nanorods

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Unusual Violet Photoluminescence in Indium-Doped ZnO Nanowires

Optical Properties of Na-Doped Zno Nanorods Grown by Metalorganic Chemical Vapor Deposition

Green, Yellow, and Orange Defect Emission from Zno Nanostructures: Influence of Excitation Wavelength

Reduced Bound Exciton and Surface Exciton Emissions in Al-Doped Zno Nanorods Exposed to Ambient Air

Defect Emissions in ZnO Nanostructures

Oxygen Vacancy Mediated Temperature Dependent Emission Behavior of Localized Bound Excitons in ZnO Nanorods

Optical Fingerprints of Donors and Acceptors in High-Quality Nh3-Doped Zno Films

Temperature-dependent Photoluminescence of Undoped, N-doped and N-In Codoped ZnO Thin Films