Abstract:We proposed the photoluminescence and third order nonlinear optical properties of indium doped zinc oxide (InZnO) thin films with various dopant concentrations. InZnO thin films were grown by simultaneous RF/DC magnetron sputtering technique with different DC power 2 W, 6 W, 8 W and 10 W respectively. The structural characterization and surface morphology of obtained thin films are characterized by XRD and SEM techniques. XRD results revealed that thin film quality is enhanced after doping indium in ZnO. The observed enhanced crystallite size from SEM images agreed with XRD results. In linear optical properties analysis, all ZnO thin films possess high optical transmittance in visible region. The resulted room temperature photoluminescence (RTPL) provided the deeply understanding of optical properties and defect states characteristics. Third order nonlinear optical properties of ZnO thin films were detected using femtosecond Z-scan technique. The domination of oxygen defects (IQ from RTPL results prohibited direct photon transition in ZnO thin films. But, it leads to observed indirect two photon transition via intermediate defect levels. The self focusing to self defocusing transition when dopant concentration heavily increased also could be interesting result of indium heavily doped ZnO thin film. However, the magnitude of third order nonlinear optical absorption as well as refraction of all ZnO thin films is found to be relatively enhanced with dopant concentration. (C) 2017 Elsevier B.V. All rights reserved.

Correlation Between the 3.31-Ev Emission and the Doping Level in Indium-Doped ZnO Nanostructures

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Acceptor-related Emissions in Indium-Doped ZnO Nanorods

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

CdZnTe Energy Levels Induced by Doping of Indium

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Raman scattering, emission, and deep defect evolution in ZnO:In thin films

Temperature-Dependent Photoluminescence and Photoluminescence Excitation of Aluminum Monodoped and Aluminum-Indium Dual-Doped Zno Nanorods

Photoluminescence and Enhanced Third Order Nonlinear Optical Properties of InZnO Thin Films

Acceptor Related Photoluminescence and Field Emission of Zno:P Nanostructures

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Annealing-induced changes of the 3.31 eV emission in ZnO nanorods

Temperature-dependent Photoluminescence of Undoped, N-doped and N-In Codoped ZnO Thin Films

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Photoluminescence Properties of Quasialigned Zncdo Nanorods

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers

Localized Exciton Emission from ZnO Nanocrystalline Films

Influence of in Dopant on Pl Spectra of Cdznte Crystals

Photoluminescence in Heavily Doped Zno : N : in Films

Correlation Between Structure and Photoluminescence of C-Axis Oriented Nanocrystalline ZnO Films and Evolution of Photo-Generated Excitons