Abstract:Indium-doped ZnO nanoparticles were synthesized by co-precipitation method using zinc nitrate hexahydrate and Indium (III) nitrate hydrate as precursor. Co-precipitation of indium-doped ZnO with various indium dopant concentrations 0–5 wt.% were obtained by calcination process at 500 °C for 2 h. The effects of indium additive in ZnO host lattice on structural, optical and electrical properties have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (FE-SEM), Energy Dispersive Spectroscopy (EDS), Diffuse Reflectance Spectroscopy (DRS) and four-point probe. XRD results reveal that all Indium-doped ZnO nanoparticles have a single phase hexagonal wurtzite structure. The position of the main diffraction peak of ZnO shifted slightly toward small angle with grain size from 210 to 430 nm. SEM images indicated that the dopant of indium affected the surface morphology of ZnO nanoparticles. The incorporation of indium ions up to 4–5 wt.% reveals that ZnO host matrix can be transformed into the rod-like structure. The element composition in weight percentage of Zn, O and In were presented using EDS element mapping analysis. The results confirmed that the incorporation of indium is doped into the ZnO host matrix with a quite uniform distribution. The optical properties were examined by DRS. The optical transmittance decreases when the indium dopant increases. The absorption band edges also moved toward the longer wavelength as increasing the indium additives. The results indicated that the incorporation of In 3+ ions replaces Zn 2+ ions in host ZnO led to an increase in the defects inside ZnO. The calculated bandgap indium-doped ZnO decreased from 3.01 to 2.86 eV when indium dopant increased from 0 to 5 wt.%. The sheet resistance of indium-doped ZnO was observed by four-point probe measurement in room temperature. The electrical transport results suggested that n-doped by incorporation of 3 wt.% significantly affected the good conducting formation of ZnO.

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Effects of Indium Doping on the Crystallographic, Morphological, Electrical, and Optical Properties of Highly Crystalline ZnO Films

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Improvement of structural, optical and electrical properties of indium-doped ZnO nanoparticles synthesized by Co-precipitation method

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Role of indium doping on structural and electrical properties of ZnO nanoparticles prepared by sol–gel method

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

2D XAFS–XEOL Mapping of Ga1–xZnxN1–xOx Nanostructured Solid Solutions

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Effect of indium doping on zinc oxide films prepared by chemical spray pyrolysis technique

Indium-doped Zinc Oxide Nanobelts

Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

Theoretical investigation on electronic and optical properties of ZnO doped with Al,Ga and In

Indium-Doped Zno Nanowires with Infrequent Growth Orientation, Rough Surfaces and Low-Density Surface Traps

First-principle study on the effect of high Li–2N co-doping on the conductivity of ZnO

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition