Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers
Chao Fan,Zhe Liu,Shuo Yuan,Xiancheng Meng,Xia An,Yongkai Jing,Chun Sun,Yonghui Zhang,Zihui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
DOI: https://doi.org/10.1021/acsami.1c06305
2021-07-20
Abstract:Two dimensional (2D) tin disulfide (SnS<sub>2</sub>) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS<sub>2</sub>-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS<sub>2</sub> (In-SnS<sub>2</sub>) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS<sub>2</sub> few layers were fabricated and detected. Compared with photodetectors based on pristine SnS<sub>2</sub>, photodetectors based on In-SnS<sub>2</sub> few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (<i>R</i>), external quantum efficiency (EQE), and normalized detectivity (<i>D</i>*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS<sub>2</sub> few layers exhibited an optimal photodetection performance with a high <i>R</i> of 153.8 A/W, a high EQE of 4.72 × 10<sup>4</sup> %, a great <i>D</i>* of 5.81 × 10<sup>12</sup> Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS<sub>2</sub> for future high-performance optoelectronic applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c06305?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c06305</a>.OM images of In-SnS<sub>2</sub> and pristine SnS<sub>2</sub> single crystals; SKM images of In-SnS<sub>2</sub> and pristine SnS<sub>2</sub> few layers; optoelectronic performance of photodetectors based on In-SnS<sub>2</sub> and pristine SnS<sub>2</sub> few layers; evaluation and comparison of photodetection performance; transfer characteristic of photodetectors; DFT calculated band structure of In-SnS<sub>2</sub> and pristine SnS<sub>2</sub>; PL spectra of In-SnS<sub>2</sub> and pristine SnS<sub>2</sub> few layers; noise current measured from the fast Fourier transform of the dark current as a function of time; UPS spectra of 1.9 at% In-SnS<sub>2</sub> and pristine SnS<sub>2</sub> single crystals (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c06305/suppl_file/am1c06305_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology