Abstract:Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984 nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure. In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

High-performance photodetectors based on two-dimensional tin(II) sulfide (SnS) nanoflakes

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

Hydrothermal Synthesis and Fast Photoresponsive Characterization of SnS2 Hexagonal Nanoflakes

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

Colloidal Tin Sulfide Nanosheets: Formation Mechanism, Ligand-mediated Shape Tuning and Photo-detection

Enhanced Photodetection Performance Of Schottky Pt/Sns2/Al And Au/Sns2/Al Photodetectors

Visible to Near-Infrared Light Detectors Based on Au/SnS/Ag Schottky Structure with Ultrahigh Responsivity and Fast Response

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection

Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

Ultrathin SnS2 Nanosheets of Ultrasonic Synthesis and Their Photoresponses from Ultraviolet to Near-Infrared

Au/SnS2/Al Schottky Structure for High Detectivity and Low Dark Current Visible Light Detector

High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures

Synthesis of 2D Tin Sulfide [SnS(x=1,2)] Layers by Proximity Evaporation: Thermodynamic Phase Tuning and Optical Photoresponsivity

2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition (adv. Electron. Mater. 3/2020)

Orietation-controlled synthesis and Raman study of 2D SnTe

Review on Tin (II) Sulfide (SnS) Material: Synthesis, Properties, and Applications

Vertical SnS2/Cr–SnS2 N–n Homostructure for High-Responsivity and Fast-Response 405 Nm Near-Ultraviolet Detectors

Laser-Induced Synthesis of Tin Sulfides