Vertical SnS2/Cr–SnS2 N–n Homostructure for High-Responsivity and Fast-Response 405 Nm Near-Ultraviolet Detectors

Weishuai Duan,Zhe Liu,Xinfa Zhu,Biao He,Chao Fan,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li

DOI: https://doi.org/10.1109/led.2023.3274149

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:Near-ultraviolet (NUV) detectors based on two-dimensional (2D) materials have garnered considerable attention owing to their atomic-scale thickness, varied bandgap, and strong interaction with incident light. In this work, homostructures composed of tin disulfide/chromium–doped tin disulfide (SnS 2 /Cr–SnS 2 ) were proposed for 405 nm near-ultraviolet detectors. Afterward, superlative detectors were fabricated through the employment of micro-mechanical exfoliation and polydimethylsiloxane-assisted dry-transfer methods, anchored by the SnS 2 Cr–SnS 2 homostructures. The detectors demonstrated exceptional detection performance for 405 nm NUV radiation with a significant responsivity of $2.04\times 10^{{3}}\,\,\text {A}\cdot \text {W}^{-{1}}$ and a short response time of 8 ms, exceeding that of detectors based on most 2D materials and even commercial light detectors (Thorlabs FD11A–Si). The work presents an effective homostructure for high-performance SnS 2 -based detectors, thereby opening an opportunity for the utilization of SnS 2 in NUV detectors.