High-speed ultraviolet photodetectors based on 2D layered CuInP 2 S 6 nanoflakes

Ru-Ru Ma,Dong-Dong Xu,Zhao Guan,Xing Deng,Fangyu Yue,Rong Huang,Ye Chen,Ni Zhong,Ping-Hua Xiang,Chun-Gang Duan

DOI: https://doi.org/10.1063/5.0022097

IF: 4

2020-09-28

Applied Physics Letters

Abstract:Although a lot of promising two-dimensional (2D) semiconductors with various bandgaps, represented by black phosphorus (0.3 eV), transition metal dichalcogenides (< 2 eV), and boron nitride (5 − 6 eV), have been extensively researched in photoelectronic and electronic devices, the spectrum of large bandgap materials is still very narrow, which limits the potential device applications in ultraviolet photodetection. The broad family of layered thio- and seleno-phosphates with wide and tunable bandgaps (1.3 − 3.5 eV) can complement the intermediate bandgaps from 1.6 to 4 eV, which can fill the gap between transition metal dichalcogenides and boron nitride. In this work, a high-performance ultraviolet photodetector based on multilayered CuInP₂S₆ was fabricated. It exhibits fast response times shorter than 0.5 ms, i.e., rise time ∼ 0.36 ms and fall time ∼ 0.44 ms for ultraviolet illumination (280 nm, 50 nW), which is superior than previously reported 2D layered-based UV detectors. Significantly, this photodetector also shows ultralow dark current (∼ 100 fA), a high on/off ratio (∼10³), and a specific detectivity of 7.38 × 10¹⁰ Jones. Our results provide an excellent candidate for low power consumption and high-speed photodetection.

physics, applied

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a high - performance ultraviolet photodetector based on two - dimensional (2D) layered CuInP₂S₆ (CIPS) nanosheets to meet the requirements of high - speed, low - power consumption and high - sensitivity ultraviolet light detection. Specifically, the paper aims to:

1. **Fill the gap in the material bandgap**: Traditional ultraviolet photodetector materials have narrow or wide bandgaps, which limit their performance in specific applications. As a material with a wide and tunable bandgap (about 2.62 eV), CIPS can fill the bandgap vacancy between transition metal dichalcogenides and boron nitride.

2. **Improve the response speed**: Existing ultraviolet photodetectors based on 2D materials show a high photoelectric responsivity, but have a long response time, usually on the order of seconds or even minutes. In this study, by using CIPS nanosheets, a fast response time at the sub - millisecond level (a rise time of 0.36 ms and a fall time of 0.44 ms) was achieved, which is significantly better than the existing reported 2D - material ultraviolet photodetectors.

3. **Enhance the detection performance**: The paper shows that the ultraviolet photodetector based on CIPS has an extremely low dark current (about 100 fA), a high on - off ratio (about 10³), and a high specific detectivity (7.38 × 10¹⁰ Jones). These characteristics make the detector have great potential in low - power consumption and high - speed light detection.

In summary, the core objective of this paper is to develop an ultraviolet photodetector with a faster response speed, lower dark current and higher sensitivity by taking advantage of the unique properties of CIPS, thereby promoting the development of ultraviolet light detection technology and providing new solutions for future portable ultrafast ultraviolet light detection devices.