Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

2D MoS2/CuPc Heterojunction Based Highly Sensitive Photodetectors Through Ultrafast Charge Transfer

Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

High Sensitive and Stable UV-Vis Photodetector Based on MoS 2 /MoO 3 vdW Heterojunction

Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition‐Grown MoS 2

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

A fast 2D MoS2 photodetector with ultralow contact resistance

High-Performance Broadband Self-Driven Photodetector Based on MoS2/Cs2CuBr4 Heterojunction

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

Junction Field‐Effect Transistors Based on PdSe 2 /MoS 2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

Ultrafast Polarization Sensitive Photodetector Based on MoS2/Ta2Pd3Se8 Hybrid Dimensional Heterostructure

Extremely Low Dark Current MoS2 Photodetector Via 2D Halide Perovskite As the Electron Reservoir

Graphene/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterojunction for ultrafast photodetectors

Design and Construction of Ultra-Thin Mose2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection

Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics

Mos2 Nanosheet Photodetectors with Ultrafast Response