Au/SnS2/Al Schottky Structure for High Detectivity and Low Dark Current Visible Light Detector

Yongkai Jing,Chao Fan,Xia An,Zhe Liu,Chun Sun,Mengjun Wang,Hongxing Zheng,Erping Li

DOI: https://doi.org/10.1109/led.2021.3132396

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:Due to their high optical absorption and atomic thickness, light detectors based on tin disulfide (SnS 2 ) have been investigated extensively. In this letter, a light detector based on a SnS 2 monolayer with an Al/SnS 2 /Au structure for visible light detection is demonstrated. Benefiting from the Au/SnS 2 Schottky structure, photoexcited electron-hole pairs are separated, and a remarkable photoresponse is achieved. At $11 ~\mu \text{W}/$ mm 2 , the peak responsivity and detectivity are 586.18 $\text{A}/\text{W}$ and $1.22\,\,\times10$ 14 Jones, which indicate that these detectors are superior both to most detectors based on two dimensional materials and to commercial Si detectors. The light detector also exhibits a fast response speed with the response time at the microsecond level. Moreover, a low dark current of 2.18 nA is achieved in this structure.