Abstract:We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2–3 μm is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, α, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of α of the order of 104 cm−1. Sharp cutoff in the values of α, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 1016 cm−3 and 5 × 1017cm−3 by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm2V−1s−1 is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition (adv. Electron. Mater. 3/2020)

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

High-performance photodetectors based on two-dimensional tin(II) sulfide (SnS) nanoflakes

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

Wavelength dependent UV-Vis photodetectors from SnS2 flakes

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

Hydrothermal Synthesis and Fast Photoresponsive Characterization of SnS2 Hexagonal Nanoflakes

Layer‐Dependent Optical Modulation and Field‐Effect‐Transistor in Two‐Dimensional 4H‐SnS2 Layers

Tin Disulfide-an Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics.

High-performance Photodetectors Based on CVD-grown High-Quality SnS 2 Nanosheets

Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection

Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 P-N and SnSe2/SnS2 N-N Nanoflakes

Phase-controlled synthesis of SnS<sub>2</sub> and SnS flakes and photodetection properties

Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2.

High-performance Hierarchical O-SnS/I-ZnIn2S4 Photodetectors by Leveraging the Synergy of Optical Regulation and Band Tailoring.

Molecular Beam Epitaxy Growth of High Quality P-Doped SnS Van Der Waals Epitaxy on a Graphene Buffer Layer

One-Step Cvd Fabrication And Optoelectronic Properties Of Sns2/Sns Vertical Heterostructures

Single Crystal Growth of Bulk SnS2 and High Yield Preparation of Few-Layer SnS2

Controlled Growth and Photoconductive Properties of Hexagonal SnS 2 Nanoflakes with Mesa-Shaped Atomic Steps