Abstract:Two-dimensional layered transition-metal dichalcogenides (TMDs) have attracted intense interest for their layer number-dependent electronic properties and have exciting potential for atomically thin electronics and optoelectronics. The studies to date have primarily been limited to exfoliated materials with limited control of the size, layer number, and yield. Despite considerable efforts to date, it remains a significant challenge to produce large-sized TMD single crystals with precise control of the layer number. Here, we report the robust growth of high-quality WSe2 single-crystal domains with a selectively controlled thickness in a reverse-flow chemical vapor deposition system with a solid precursor. By introducing a pre-annealing step to tune elemental distribution and volatilization rate of the solid precursor, we stabilize the vapor supply to achieve a highly uniform nucleation and growth, and thus ensure the precise control of the layer number for the highly selective growth of monolayer or bilayer WSe2 single crystals (>500 μm). The transmission electron microscopy and optical characterizations of the resulting WSe2 single crystals exhibit excellent crystalline quality with systematically tunable optical properties. Electrical transport studies further show that the WSe2 field-effect transistors exhibit p-type semiconductor characteristics with effective hole carrier mobility up to 92 cm2 V–1 s–1 in monolayer and 145 cm2 V–1 s–1 in bilayer materials at room temperature. This simple approach opens up a new avenue for the highly controlled synthesis of WSe2 atomic layers for both fundamental studies and technological applications.

Single Crystal Growth of Bulk SnS2 and High Yield Preparation of Few-Layer SnS2

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

Large-Scale Production and Optical Properties of a High-Quality SnS2 Single Crystal Grown Using the Chemical Vapor Transportation Method

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

Large Single Crystal Sns2 Flakes Synthesized from Coevaporation of Sn and S

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Electrical Transport Properties of Few-Layer SnS2 Field-effect Transistors

2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition (adv. Electron. Mater. 3/2020)

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

Realization of Large Scale, 2D van der Waals Heterojunction of SnS 2 /SnS by Reversible Sulfurization

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Controlled synthesis of few-layer SnSe2 by chemical vapor deposition

Synthesis of 2D Tin Sulfide [SnS(x=1,2)] Layers by Proximity Evaporation: Thermodynamic Phase Tuning and Optical Photoresponsivity

Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

One-Step Cvd Fabrication And Optoelectronic Properties Of Sns2/Sns Vertical Heterostructures

Selective synthesis of large-area monolayer tin sulfide from simple substances

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2