Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Tiefeng Yang,Biyuan Zheng,Zhen Wang,Tao Xu,Chen Pan,Juan Zou,Xuehong Zhang,Zhaoyang Qi,Hongjun Liu,Yexin Feng,Weida Hu,Feng Miao,Litao Sun,Xiangfeng Duan,Anlian Pan

DOI: https://doi.org/10.1038/s41467-017-02093-z

IF: 16.6

2017-12-01

Nature Communications

Abstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

multidisciplinary sciences