Abstract:Van der Waals (vdWs) heterostructures based on 2D metals and semiconductors have attracted considerable attention due to their excellent properties and great application potential in next‐generation electronic and optoelectronic devices. To obtain such vdWs heterostructures, the conventional approach with artificial exfoliation and stacking of 2D metals onto 2D semiconductors in the vertical direction is still far from satisfactory, because of the low yield and impurity‐involved transfer process. Here, two‐step vapor deposition growth of 2D TaSe2‐MoSe2 metal–semiconductor heterostructures is reported. Raman maps confirm the precise spatial modulation of the as‐grown 2D TaSe2‐MoSe2 heterostructures. Structural analysis reveals that the upper 1T‐TaSe2 is formed heteroepitaxially on/around the presynthesized 2H‐MoSe2 monolayers with an epitaxial relationship of (10‐10)TaSe2//(10‐10)MoSe2 and [0001]TaSe2//[0001]MoSe2. Based on the detailed characterizations of morphology, structure, and composition, an edge‐induced growth mechanism is proposed to illustrate the formation process of the 2D heterostructures, confirmed by first‐principle calculations. In addition, Kelvin probe force microscope characterizations and electrical transport measurements confirm that the 2D metal–semiconductor heterostructures exhibit typical rectification characteristics with a contact potential height of ≈431 mV. The direct growth of high‐quality 2D metal–semiconductor heterostructures marks an important step toward high‐performance integrated optoelectronic devices. 2D TaSe2‐MoSe2 metal–semiconductor heterostructures are successfully achieved usin an edge‐induced epitaxial growth mode. The unique contact potential and strong current rectification behavior will facilitate the development high‐performance transition metal dichalcogenide‐based electronic devices.

In‐plane Epitaxial Growth of 2D CoSe‐WSe2 Metal‐semiconductor Lateral Heterostructures with Improved WSe2 Transistors Performance

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe 2 as high performance contacts for WSe 2 transistors

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Edge‐Assisted Epitaxy of 2D TaSe 2 ‐MoSe 2 Metal‐Semiconductor Heterostructures and Application to Schottky Diodes

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Lateral Heterojunctions Within Monolayer Semiconductors

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Controllable Synthesis of WSe2-WS2 Lateral Heterostructures via Atomic Substitution

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Nanopore-patterned CuSe drives the realization of PbSe-CuSe lateral heterostructure

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes