Abstract:Although graphene-based heterostructures exhibit excellent intrinsic properties for device scaling, fabricating low Schottky barrier is still a great challenge to the electrical transport behaviors of nanoelectronic devices. Exploring excellent materials for electronic devices are a research hotspot at present. Graphene not only exhibits excellent physical strength and specific surface area, but also presents high carrier mobility and thermal conductivity. Therefore, graphene has been developed in many fields such as energy, catalysis, etc. However, graphene is a special material with zero band gap, and its electrons and holes are easy to compound, which seriously hinders its development in the applications of electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides (TMDs) have the advantages of controllable band gap properties, which makes them have a good development in logic circuits and photodetectors. As one of TMD S , MoSe 2 possesses the advantages of narrower band gap, better electron hole separation and stronger oxidation resistance in the environment. Therefore, the design of graphene and MoSe 2 heterostructures is an ideal choice for a new generation of nanoelectronic devices. Here, we investigate systematically the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe 2(1– x ) O 2 x heterostructure for the first time by first-principles calculations incorporating semiempirical dispersion-correction scheme. The results indicate that graphene and MoSe 2 monolayer can form a stable van der Waals heterostructure with preserving their own intrinsic properties. In addition, an n-type schottky contact with a barrier height of 0.558 eV is obtained. Further, it is found that the type and the height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant at interface. By increasing the concentration of the O dopant inside the interface, the transition from an n-type Schottky contact to an Ohmic contact can be realized, and a low n-type Schottky barrier is gained with increasing the concentration of the O dopant outside the interface for highly efficient charge transfer. The barrier height of heterostructure decreases from 0.558 eV to 0.112 eV when the O dopant is doped on the outer interface. Finally, as a complement to previous results, it is confirmed that the redistribution of interfacial charges leads the Fermi level to shift, and thus determining the type and the height of Schottky barrier. This study may provide theoretical guidance for designing and manufacturing the MoSe 2 - based nano field effect transistors.

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Edge‐Assisted Epitaxy of 2D TaSe 2 ‐MoSe 2 Metal‐Semiconductor Heterostructures and Application to Schottky Diodes

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

Two-dimensional MoSe2/graphene Heterostructure Thin Film with Wafer-Scale Continuity Via Van Der Waals Epitaxy

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires.

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

In‐plane Epitaxial Growth of 2D CoSe‐WSe2 Metal‐semiconductor Lateral Heterostructures with Improved WSe2 Transistors Performance

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS 2 Matrix

Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration

Regulation and Control of Schottky Barrier in Graphene/mose2 Heteojuinction by Asymmetric Oxygen Doping