Abstract:Artificial van der Waals (vdWs) heterostructures offer unprecedented opportunities to explore and reveal novel synergistic electronic and optical phenomena, which are beneficial for the development of novel optoelectronic devices at atomic limits. However, due to the damage caused by the device fabrication process, their inherent properties such as carrier mobility are obscured, which hinders the improvement of device performance and the incorporation of vdWs materials into next-generation integrated circuits. Herein, combining pump-probe spectroscopic and scanning probe microscopic techniques, the intrinsic optoelectronic properties of PtSe 2 /MoSe 2 heterojunction were nondestructively and systematically investigated. The heterojunction exhibits a broad-spectrum optical response and maintains ultrafast carrier dynamics (interfacial charge transfer ~ 0.8 ps and carrier lifetime ~ 38.2 ps) simultaneously. The in-plane exciton diffusion coefficient of the heterojunction was extracted (19.4 ± 7.6 cm 2 ·s −1 ), and its exciton mobility as high as 756.8 cm 2 ·V −1 ·s −1 was deduced, exceeding the value of its components. This enhancement was attributed to the formation of an n-type Schottky junction between PtSe 2 and MoSe 2 , and its built-in electric field assisted the ultrafast transfer of photogenerated carriers from MoSe 2 to PtSe 2 , enhancing the in-plane exciton diffusion of the heterojunction. Our results demonstrate that PtSe 2 /MoSe 2 is suitable for the development of broad-spectrum and sensitive optoelectronic devices. Meanwhile, the results contribute to a fundamental understanding of the performance of various optoelectronic devices based on such PtSe 2 two-dimensional (2D) heterostructures.

Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration

Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition

Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy

Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure

Controllable Epitaxial Growth of Large‐Area MoS 2 /WS 2 Vertical Heterostructures by Confined‐Space Chemical Vapor Deposition