Abstract:This work demonstrates a universal strategy for robust growth of high‐quality transition metal dichalcogenide (TMD) vertical heterostructures and a novel design concept for the fabrication of high mobility and high responsivity photodetectors based on 2D TMD vertical heterostructures, which holds promise for the next‐generation photodetectors. Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next‐generation electronic and optoelectronic applications due to their atomic‐scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in‐plane and out‐of‐plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium‐assisted CVD process. The ammonium‐assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium‐assisted strategy for robust growth of high‐quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics.

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Van Der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

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Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium‐Assisted CVD Strategy

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes

Edge‐Assisted Epitaxy of 2D TaSe 2 ‐MoSe 2 Metal‐Semiconductor Heterostructures and Application to Schottky Diodes

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Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

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Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices

In‐plane Epitaxial Growth of 2D CoSe‐WSe2 Metal‐semiconductor Lateral Heterostructures with Improved WSe2 Transistors Performance

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Atomically Thin Twisted Heterostructure Optoelectronics Enhanced via vdW Interface Engineering

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.