Abstract:Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1-x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1-x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1-x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1-x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W-1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1-x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.

Van Der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Space‐Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS2 Flakes for Optoelectronic Application

Epitaxial Growth of HfS 2 on Sapphire by Chemical Vapor Deposition and Application for Photodetectors

Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors

Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

Ultrafast and Ultrasensitive Phototransistors Based on Few-Layered Hfse2

Large‐Area Synthesis of Layered HfS2(1−x)Se2x Alloys with Fully Tunable Chemical Compositions and Bandgaps

Synthesis and Broadband Photodetection of a P-Type 1D Van Der Waals Semiconductor HfSnS3.

Ultrasensitive Phototransistors Based on Few‐Layered HfS2

Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors

High‐Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets

Synthesis and Broadband Photodetection of a PвАРType 1D Van der Waals Semiconductor HfSnS3

P-N Conversion of Charge Carrier Types and High Photoresponsive Performance of Composition Modulated Ternary Alloy W(SxSe1-x)2 Field-Effect Transistors.

Type-I PtS2/MoS2 van der Waals Heterojunction with Tunable Photovoltaic Effect and High Photosensitivity

Ultrahigh-Detectivity Photodetectors with Van Der Waals Epitaxial CdTe Single-Crystalline Films

Few‐Layered PtS2 Phototransistor on H‐bn with High Gain

High-performance Ultra-Violet Phototransistors Based on CVT-grown High Quality SnS2 Flakes.

Narrowing Bandgap of HfS 2 by Te Substitution for Short‐Wavelength Infrared Photodetection

Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates Through Low‐thermal Budget