Abstract:2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure‐of‐merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization‐sensitive detection are pointed out on the basis of the state‐of‐the‐art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high‐performance photodetectors is given to provide a guideline for the future development of this fast‐developing field. Photodetectors based on 2D materials with excellence performance are demonstrated in recent years. The fast development of this field, including many important progresses such as ultrahigh photoresponsivities, room temperature long wavelength infrared photodetections, images by graphene array devices, and polarization sensitive photodetections, are reviewed. The large number of 2D materials give great opportunities to explore novel high‐performance photodetectors.

A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors

Noble Metal Dichalcogenides: A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors (Adv. Funct. Mater. 5/2020)

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Van Der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors

Broadband and High‐Performance Photodetector Fabricated Using Large Area and Transfer‐Free 2D–2D PtS2/MoS2 Heterostructure

Wafer-Scale Synthesis of 2D Dirac Heterostructures for Self-Driven, Fast, Broadband Photodetectors

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

2D-3D heterostructure of PtS2-x/Ga2O3 and their band alignment studies for high performance and broadband photodetector

Highly Efficient, Ultrabroad PdSe 2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

Manipulating the Light‐Matter Interaction of PtS/MoS 2 p–n Junctions for High Performance Broadband Photodetection

Type-I PtS2/MoS2 van der Waals Heterojunction with Tunable Photovoltaic Effect and High Photosensitivity

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure

Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Two-Dimensional Pnictogen for Field-Effect Transistors

High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS2 van der Waals Epitaxial Heterostructures

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Two-Dimensional ZrS 2 and HfS 2 for Making Sub-10 nm High-Performance P-Type Transistors