Manipulating the Light‐Matter Interaction of PtS/MoS 2 p–n Junctions for High Performance Broadband Photodetection

Fang Li,Rui Tao,Banglin Cao,Lei Yang,Zegao Wang
DOI: https://doi.org/10.1002/adfm.202104367
IF: 19
2021-06-24
Advanced Functional Materials
Abstract:<p>Due to the limited carrier concentration, 2D transition metal dichalcogenides have lower intrinsic dark current, and thus, are widely studied for high performance room photodetection. However, the light-matter interaction is still unclear, thus tuning the photoexcitation and further manipulating the photodetection is a challenge. Herein, large-area PtS films are synthesized, and the growth mechanism is investigated. It is demonstrated that PtS has an orthorhombic structure and exhibits the p-type semiconducting behavior. Then, MoS<sub>2</sub>/PtS p–n heterojunction is fabricated, and its energy diagram is discussed based on the Kelvin probe force microscopy. The contact potential difference is about 160 mV, which is much larger than previous 2D junctions facilitating the charge separation. Furthermore, the phototransistor based on MoS<sub>2</sub>/PtS p–n heterojunction is prepared, showing broadband photoresponse from visible to near-infrared. The manipulation of an external field on photoresponse, detectivity, and rise/fall time are explored and discussed. The responsivity can reach up to 25.43 A W<sup>−1</sup>, and the detectivity is 8.54 × 10<sup>12</sup> Jones. These results indicate that PtS film is a prospective candidate for high-performance optoelectronic devices and broaden the scope of infrared detection materials.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is that in two - dimensional transition - metal dichalcogenides (TMDCs), due to the limited carrier concentration, the light - matter interaction (i.e., the photo - excitation process) is still unclear. Therefore, modulating photo - excitation and then manipulating photoelectric detection is a challenge. Specifically, the paper focuses on studying and improving the photodetection performance by synthesizing large - area PtS thin films and constructing MoS₂/PtS p - n heterojunctions. The focus of the research is to explore the influence of the external electric field on the photoelectric response, detectivity and response time, and how these factors change with the variation of the light wavelength and power. Through these studies, the authors hope to provide new ideas and solutions for the development of high - performance optoelectronic devices, especially infrared detection materials.