Highly Responsive and Self-Powered Photodetector Based on PtSe2/MoS2 Heterostructure

Haoran Li,Zhibin Yang
DOI: https://doi.org/10.3390/molecules29112553
IF: 4.6
2024-05-30
Molecules
Abstract:In recent years, 2D materials and their heterostructures have started to offer an ideal platform for high-performance photodetection devices. In this work, a highly responsive, self-powered photodetector based on PtSe2/MoS2 van der Waals heterostructure is demonstrated. The device achieves a noteworthy wide band spectral response from visible (405 nm) range to the near infrared region (980 nm). The remarkable photoresponsivity and external quantum efficiency up to 4.52 A/W, and 1880% are achieved, respectively, at 405 nm illumination with fast response time of 20 ms. In addition, the photodetector exhibits a decent photoresponsivity of 33.4 mA/W at zero bias, revealing the photodetector works well in the self-driven mode. Our work suggests that a PtSe2/MoS2 heterostructure could be a potential candidate for the high-performance photodetection applications.
chemistry, multidisciplinary,biochemistry & molecular biology
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to develop a high - performance self - powered photodetector. Specifically, the author achieves this goal by constructing a PtSe₂/MoS₂ van der Waals heterostructure. This heterostructure photodetector has the following characteristics: 1. **Wide spectral response**: A wide spectral response range from visible light (405 nm) to the near - infrared region (980 nm). 2. **High responsivity and external quantum efficiency**: Under 405 - nm illumination, the photoresponsivity reaches 4.52 A/W, and the external quantum efficiency reaches 1880%. 3. **Fast response time**: The response time is 20 milliseconds. 4. **Self - powered working mode**: Under zero - bias conditions, the photodetector can still exhibit good photoresponsivity (33.4 mA/W), demonstrating its effectiveness in self - powered mode. ### Main research background and motivation 1. **Limitations of existing photodetectors**: - **Silicon - based photodetectors**: The detection spectral range is limited (up to about 900 nm), and due to its relatively large intrinsic bandgap (1.12 eV), its applications in some fields are restricted. - **Traditional compound semiconductor photodetectors**: They require expensive manufacturing processes or harsh working conditions (such as low temperature). - **Low flexibility and difficulty in small - size manufacturing**: The applications of these materials in wearable devices and nano - scale optoelectronics are limited. 2. **Advantages of two - dimensional materials**: - **High conductivity**: Two - dimensional materials have high conductivity, layer - dependent bandgaps, excellent light - matter interactions, and high flexibility. - **Reduction of dark current**: The absence of dangling bonds on the surface can reduce the dark current caused by surface recombination, which is beneficial to the performance improvement of two - dimensional photodetectors. 3. **Applications of transition metal dichalcogenides (TMDs)**: - **MoS₂**: It has excellent electrical and optical properties. Monolayer MoS₂ has a direct bandgap (1.9 eV) at room temperature, which is suitable for photodetection. - **PtSe₂**: It has a relatively high carrier mobility (up to 4000 cm²/(V·s) at room temperature), is sensitive to the near - infrared region, but has problems such as high dark current and weak light absorption. ### Solution By constructing a PtSe₂/MoS₂ heterostructure, the advantages of the two materials are combined to overcome the disadvantages of a single material. Specifically: - **Appropriate energy band alignment**: The built - in potential between PtSe₂ and MoS₂ can effectively suppress the dark current and promote carrier separation. - **Self - powered ability**: The built - in potential of the heterostructure enables the photodetector to work without an applied voltage, increasing its application potential in complex environments. ### Experimental results - **Photoresponse characteristics**: Under different wavelengths (405 nm, 700 nm, 980 nm) and different power densities, the photodetector exhibits excellent photoresponse characteristics. - **Responsivity and quantum efficiency**: Under 405 - nm illumination, the responsivity reaches 4.52 A/W, and the external quantum efficiency reaches 1880%. - **Self - powered mode**: Under zero - bias conditions, the photoresponsivity of the photodetector is 33.4 mA/W, indicating its effectiveness in self - powered mode. ### Conclusion This research shows that the photodetector based on the PtSe₂/MoS₂ heterostructure has high responsivity and self - powered ability in a wide spectral range, and has broad application prospects, especially in the fields of wearable devices and nano - optoelectronics.