Self-powered Photodetector with GeSe/WS2/MoS2 Van Der Waals Heterojunctions

ZHANG Yongzhi,HE Xunjun

DOI: https://doi.org/10.1016/j.sna.2024.116080

IF: 4.291

2024-01-01

Sensors and Actuators A Physical

Abstract:Two-dimensional transition metal compounds and their heterojunction devices have been proven to have significant application value in the photodetector fields. With the deepening of energy-saving concepts, the self-powered photodetectors have undeniable advantages, including the requirement of no external power supply and strong environmental adaptability. However, most existing self-powered photodetectors suffer from the structure degradation, thereby resulting in slow response speed and low responsivity. Here, we report a self-powered GeSe/WS2/MoS2 photodetector with vertical van der Waals heterojunctions prepared by mechanical exfoliation. Such unique structure can not only effectively avoid the performance degradation or even failure caused by GeSe oxidation but also exhibit sensitive anisotropy and high rectification ratio. In the self-powered mode, the experimentally fabricated device shows the switching ratio of 3.2×103, the dark current of 1.1×10-13A, the responsivity of 14mA/W, the external quantum efficiency of 4.1%, the detectivity of 7.3×108 Jones, and rise and fall time of 2.4 ms and 5.2 ms, respectively. In continuous high-frequency switching, moreover, the device can also operate stably. Therefore, such multi-heterojunctions provide new ideas for the designs of multifunctional self-powered photodetectors.