High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region
Bin Wang,Jian Yuan,Mengqi Che,Mingxiu Liu,Yuting Zou,Junru An,Fan Tan,Yaru Shi,Nan Zhang,Liujian Qi,Shaojuan Li
DOI: https://doi.org/10.1007/s11432-023-3812-1
2024-02-22
Science China Information Sciences
Abstract:Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe 2 /MoS 2 heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 10 4 . The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 10 3 , 27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities ( D *) were 2.2 × 10 13 Jones (635 nm), 3.55 × 10 11 Jones (785 nm), and 2.72 × 10 8 Jones (1550 nm). The device demonstrated a rise/fall time of 131/241 μs under 1550 nm laser illumination. Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe 2 /MoS 2 heterojunctions in the domain of high-performance broadband photodetectors.
computer science, information systems,engineering, electrical & electronic